Samsung open doors to new memory fab, starts churning out 2Xnm DDR3 by VR-Zone.com
Back in May last year Samsung started building its Line-16 memory fab and trial production kicked off back in June this year, followed by mass production in August and the company has now announced that the Fab has gone into full production. According to Samsung this is the world's largest memory Fab and that in itself might be impressive, but what we're more interested in is Samsung new 20nm "class" DDR3 memory and NAND flash which is being made in the Fab.
As you'd expect, the new Fab is located in Korea and is a part of Samsung's Nano City complex in Hwaseong. It has 198,000 square meters of workspace and is a 12 story building. In the Fab Samsung can manufacture over 10,000 12-inch wafers of 2Xnm NAND flash plus an unknown amount of DDR3 wafers. That's a serious amount of memory and it's easy to see why Samsung is one of the leading memory manufacturers in the world.
Samsung is also expecting to move to 10nm class NAND flash production at the Fab come next year. Additionally the company will move from 2Gbit DDR3 DRAM chips to 4Gbit chips later this year, which will be used in 4, 8, 16 and 32GB DDR3 DIMMs, although apparently we'll have to wait until next year before these hit retail. Samsung is expecting to output 50 percent more memory chips by moving from 3Xnm to 2Xnm and claims that the 2Xnm chips will use up to 40 percent less power than its 3Xnm chips. Hopefully from a consumer perspective this means that we can look forward to more affordable SSDs and sustained memory prices over at least the next 12 months.
Samsung open doors to new memory fab, starts churning out 2Xnm DDR3
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